A 13-GHz Single Chip Front-End Module with 42% TX PAE and 2.2-dB RX Noise Figure in 0.15-μm E/D-mode GaAs pHEMT Technology For 6G Wireless Communications
Year: 2025
Type: conference-paper
Authors: Jungsik Kim, Kyung Pil Jung, Seung Hun Kim, Sungjae Oh, Seong-Kyun Kim, Dongjin Jung, Dae Young Lee
Institution: Samsung (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4412624566
