Work

Low-Leakage 8T SRAM Based on Body Effect and Power Gating Technique

Year: 2025

Type: conference-paper

Source: IEEE International Conference on Electronic Technology, Communication and Information (ICETCI)

DOI: 10.1109/icetci64844.2025.11084001

Author: Tianqi Huang

Institution: University of Electronic Science and Technology of China

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412624600

FWCI: 7.075

Cites: 9

Cited by: 3

Related to: 10