Work

A CMOS-Enabled Heterogeneously-Integrated InP HEMT W-band LNA with 2.8-dB Noise Figure at 7.7-dB Gain and 4.5 mW PDC

Year: 2025

Type: conference-paper

Source: Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium

DOI: 10.1109/rfic61188.2025.11082842

Authors: Justin J. Kim, Alex Dinkelacker, Nicholas Vong, Michael D. Hodge, Matthew H. Tom, Bennett C. Coy, Mark R. Soler, Christopher Maxey, Florian Herrault, James F. Buckwalter

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, University of California, Air Force Research Laboratory

OpenAlex ID: W4412624664

FWCI: 4.601

Cites: 8

Cited by: 2

Related to: 10