Redox tunable conjugated radicals enable low threshold voltage memristors for artificial synapses
Year: 2025
Type: article
Source: Materials Horizons
DOI: 10.1039/d5mh00886g
Institutions: Zhengzhou University, Sichuan University, University of Tsukuba
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4412634844
