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Redox tunable conjugated radicals enable low threshold voltage memristors for artificial synapses

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Year: 2025
Type: article
Source: Materials Horizons
DOI: 10.1039/d5mh00886g
Authors: Kai Peng, Hanjiao Chen, Chengjia Shi, Siying Liu, Yan Hou, Yu Yan, Zhicong Li, Shuiren Liu, Li Zhang, Xiaoguang Hu, Xuying Liu
Institutions: Zhengzhou University, Sichuan University, University of Tsukuba
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Department of Henan Province
Awards: G1640311451, G2313490010, G6438088522, G7377836078
OpenAlex ID: W4412634844
FWCI: 0.462
Cites: 40
Cited by: 2
Related to: 10
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