Work

A novel high endurance HZO FeFET with monolayer graphene inserted in the gate oxide

Year: 2025

Type: article

Source: Nanoscale

DOI: 10.1039/d5nr02579f

Authors: Liang Chen, Runteng Zhu, Xin Gao, Anyu Tong, Hailin Peng, Yanqing Wu, Ru Huang, Kechao Tang

Institution: Peking University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Higher Education Discipline Innovation Project, National Key Research and Development Program of China

Awards: G1726525926, G2390305753, G2504776311, G5962490683, G7436698130, G7480401652

OpenAlex ID: W4412654336

FWCI: 0.451

Cites: 43

Cited by: 2

Related to: 10