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Unlocking a near 1 eV direct band gap, lattice-matched InN–As heterostructure with moist resistance for enhanced optoelectronic applications

Year: 2025

Type: article

Abstract: ), making it highly suited for absorbing visible light. As a result, improved optical absorption intensity and photo response range in the proposed heterostructure are also observed compared with individual InN and As monolayers.

Source: Physical Chemistry Chemical Physics

DOI: 10.1039/d5cp02275d

Authors: Yee Hui Robin Chang, Keat Hoe Yeoh, Junke Jiang, Moi Hua Tuh, Qiuhua Liang

Institutions: Universiti Teknologi MARA, Sunway University, Eindhoven University of Technology, Chalmers University of Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4412687360

FWCI: 1.034

Cites: 56

Cited by: 5

Related to: 10