Simulation of E-Mode β -Ga2O3 Interlayer-Based Vertical Trench Power MOSFET With Fast-Switching Performance at High Temperatures
Year: 2025
Type: article
Abstract: In this paper, an interlayer-based vertical trench power$\beta $-Ga2O3 MOSFET with nitrogen-doped current blocking layers (CBLs) is designed and simulated in Sentaurus TCAD. The proposed MOSFET achieves Enhancement-mode (E-mode) operation and better performance than the reported E-mode$\beta $-Ga2O3 transistors with CBLs. The DC characteristics present a higher on/off current ratio of$10^{8}$than the reported$\beta $-Ga2O3 U-shaped MOSFETs, and a higher on-current density of 94 A/cm2, a lower specific on-resistance of 26.5 m$\Omega \cdot $cm2, and a larger breakdown voltage of 483 V than the reported$\beta $-Ga2O3 current aperture vertical MOSFETs. The thermal characteristic study shows that the proposed device can work up to$500~^{\circ }$C in E-mode operation with an on-current density of 35 A/cm2 and on-resistance of 104 m$\Omega $.cm2. The dynamic characteristics are explored, and excellent switching performance with a turn-on time of 29 ns and a turn-off time of 48 ns at room temperature is achieved. At$500~^{\circ }$C, the turn-on time slightly increases to 38 ns due to the reduced electron mobility, and the turn-off time is still in the order of 40 ns because of the less discharge time of the lower on-state gate charge. The proposed MOSFET is examined in a boost converter application, and an efficiency of 89% and a voltage conversion ratio of 1.42 for a duty cycle of 40% are obtained. Our work shows the proposed$\beta $-Ga2O3 MOSFET has great potential as a high-speed switch in power electronics applications.
Source: IEEE Access
Authors: Xiaoqing Chen, Feng Li, Herbert Hess
Institution: University of Idaho
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,075
Funder: Micron Foundation
OpenAlex ID: W4412713425