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Ka-Band Low-Noise Amplifier with Active Inductor Using 28-nm FD-SOI CMOS Process for 5G FR2 Applications

Year: 2025

Type: conference-paper

Source: International Conference on Electronics, Circuits and Information Engineering (ECIE)

DOI: 10.1109/ecie65947.2025.11086985

Authors: Bohyeon Kim, Hyojin Yoon, Jaeyong Lee, Changkun Park

Institution: Soongsil University

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412721223

FWCI:

Cites: 19

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Related to: 10