Work

Revealing the influence of annealing on mid- and long-wave infrared dual-color HgCdTe p–n junctions at the nanometer scale

Year: 2025

Type: article

Source: Nanoscale

DOI: 10.1039/d5nr00996k

Authors: Feiyu Mao, Gang Qin, Rui Xin, Li Yu, Yue Cheng, Liqi Zhu, Jian Zhang, Chun Lin, Tianxin Li

Institutions: Shanghai University, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, State Key Laboratory of Infrared Physics, Kunming Institute of Physics, ShanghaiTech University, University of Shanghai for Science and Technology

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, Science and Technology Commission of Shanghai Municipality

Awards: G1243230110, G3216018097, G3836210385, G5386972845, 非平衡红外光电极化激元量子物态相干调控与探测效应研究, G6260718790, G8646717170

OpenAlex ID: W4412756498

FWCI:

Cites: 25

Cited by:

Related to: 10