Numerical analysis on the thermal stress and dislocation density of a 300 mm SiC single crystal grown by the PVT method
Year: 2025
Type: article
Source: CrystEngComm
DOI: 10.1039/d5ce00471c
Authors: Sheng'ou Lu, Binjie Xu, Lingling Xuan, Anqi Wang, Pengyang Chen, Fan Wang, Xiaodong Pi, Deren Yang, Xuefeng Han
Institution: Zhejiang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4412778915