Work

Analysis of Grain Boundary Effects Based on Location in a Diode-Type NAND Flash Memory Cell

Year: 2025

Type: conference-paper

Source: Silicon Nanoelectronics Workshop (SNW)

DOI: 10.23919/snw65111.2025.11097265

Authors: Jinsu Kim, Hansol Kim, Hojin Moon, Wonjun Song, Jong-Ho Bae, Nagyong Choi, Sung Yun Woo

Institutions: Kyungpook National University, Yonsei University, Seoul National University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412803128

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