Work

Evaluation of In-Memory Logic Computation for Ferroelectric Capacitive Memory

Year: 2025

Type: conference-paper

Source: Silicon Nanoelectronics Workshop (SNW)

DOI: 10.23919/snw65111.2025.11097210

Authors: Hao-Hsiang Chang, Po-Tsang Huang, Pin Su

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412803180

FWCI:

Cites: 3

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Related to: 10