Work

Charge Pumping Electrically-Detected Magnetic Resonance in Si MOS Transistors-Identification of Interface Defects and Dopant Atoms-

Year: 2025

Type: conference-paper

Source: Silicon Nanoelectronics Workshop (SNW)

DOI: 10.23919/snw65111.2025.11097249

Author: Masahiro Hori

Institution: Shizuoka University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412803238

FWCI:

Cites: 9

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Related to: 10