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Displacement Damage Effects Induced by Proton Irradiation in $\boldsymbol{\beta}-\mathbf{Ga}_{2}\mathbf{O}_{3}$ Schottky Barrier Diodes

Year: 2025

Type: conference-paper

Source: Silicon Nanoelectronics Workshop (SNW)

DOI: 10.23919/snw65111.2025.11097240

Authors: Young Jo Kim, Tae Seong Kwon, Sung Yun Woo, Young Jun Yoon, Jae Hwa Seo

Institutions: Korea Electrotechnology Research Institute, Kyungpook National University, Gyeongkuk National University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Korea Electrotechnology Research Institute, National Research Council of Science and Technology

OpenAlex ID: W4412803308

FWCI:

Cites: 4

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Related to: 10