Work

Observation of State Change in 40nm TaOx ReRAM Cells During Read-Disturb

Year: 2025

Type: conference-paper

Source: Silicon Nanoelectronics Workshop (SNW)

DOI: 10.23919/snw65111.2025.11097277

Authors: Shota Suzuki, Naoko Misawa, Chihiro Matsui, Ken Takeuchi

Institution: The University of Tokyo

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412803474

FWCI:

Cites: 1

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Related to: 10