Work

Study on the Application and Reliability of High-k HfO2/ZrO2 Superlattice Dielectrics in Ge Stacked Nanosheet GAAFET at 4K Ultra-Low Temperature

Year: 2025

Type: conference-paper

Source: Silicon Nanoelectronics Workshop (SNW)

DOI: 10.23919/snw65111.2025.11097215

Authors: Tzu-I Kao, Kai-Wei Huang, Chen-You Wei, Yi-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu

Institutions: National Tsing Hua University, Taiwan Semiconductor Manufacturing Company (Taiwan)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412803500

FWCI: 7.075

Cites: 4

Cited by: 3

Related to: 10