Work

Impact of Oxygen Vacancies on Switching Behavior of Ferroelectric $\mathbf{HfO}_{2}$ from First Principle

Year: 2025

Type: conference-paper

Source: Silicon Nanoelectronics Workshop (SNW)

DOI: 10.23919/snw65111.2025.11097252

Authors: Chenxi Yu, Xujin Song, Jiajia Zhang, Dijiang Sun, Xiaoyan Liu, Fei Liu, Jinfeng Kang

Institution: Peking University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412803527

FWCI:

Cites: 4

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Related to: 10