Work

Capacitor-Less IGZO Based Gain Cell (2TOC): A Disruptive Technology for High-Density eDRAM and 3D-DRAM

Year: 2025

Type: conference-paper

Source: Silicon Nanoelectronics Workshop (SNW)

DOI: 10.23919/snw65111.2025.11097272

Authors: A. Belmonte, H. Oh, N. Rassoul, S. Subhechha, A. Chasin, D. Matsubayashi, Y. Wan, H. Dekkers, R. Delhougne, G.S. Kar

Institution: IMEC

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4412803555

FWCI:

Cites: 3

Cited by:

Related to: 10