Work

Enhanced Reliability and Wake-Up Free Behavior of $\mathbf{HfO}_{2}/\mathbf{ZrO}_{2}$ Superlattice FeRAM with Triple-Level Cell Using High- and Low-Temperature ALD Stacks

Year: 2025

Type: conference-paper

Source: Silicon Nanoelectronics Workshop (SNW)

DOI: 10.23919/snw65111.2025.11097259

Authors: Kuan-Wen Huang, Kun-Tao Lin, Yu-Yun Wang, Tien-Sheng Chao

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and Technology

Award: G254635664

OpenAlex ID: W4412803560

FWCI:

Cites: 2

Cited by:

Related to: 10