Work

Superlattice Structure for High Performance AlGaN Deep Ultraviolet LEDs

Year: 2025

Type: article

Abstract: This study presents a novel approach to mitigate electron overflow in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs) by integrating engineered quantum barriers (QBs) with a concave shape and an optimized AlGaN superlattice (SL) electron blocking layer (EBL). The concave QBs reduce electron leakage by lowering the electron thermal velocity and mean free path, enhancing electron capture in the active region. The SL EBL further reduces electron overflow without compromising hole transport. At a wavelength of ~253.7 nm, the proposed LED demonstrates a 2.67× improvement in internal quantum efficiency (IQE) and a 2.64× increase in output power at 150 mA injection, with electron leakage reduced by ~4 orders of magnitude compared to conventional LEDs. The efficiency droop is found to be just 2.32%.

Source: Photonics

DOI: 10.3390/photonics12080752

Authors: Mano Bala Sankar Muthu, Ravi Teja Velpula, Barsha Jain, Hieu Pham Trung Nguyen

Institution: Texas Tech University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,896

Funder: National Science Foundation