Work

Investigation of Vacuum Pumping and Gate Bias Stress Effects on Electrical Performance and Trap Characteristics in Bottom-Gated CNT FETs

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00236

Authors: Chao Xu, Hui Zhu, Yang Yang, Shijie Pan, Ke Yan, Wenxuan Zheng, Miaomiao Xu, Yong Zhang, Shuai Huo, Jingyi Hu, Congshan Hu, Chunsheng Guo, Yamin Zhang, Shiwei Feng

Institution: Beijing University of Technology

Language: English

Topic: Carbon Nanotubes in Composites

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Municipal Natural Science Foundation, National Key Research and Development Program of China

Awards: G6947546890, G7077934047, 电驱系统中碳化硅功率器件短时过载能力评估技术研究, G7763940209

OpenAlex ID: W4412920303

FWCI: 1.043

Cites: 53

Cited by: 5

Related to: 10