Work

Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device

Year: 2025

Type: article

Source: IEEE Transactions on Nanotechnology

DOI: 10.1109/tnano.2025.3595532

Authors: Seungwon Go, Sunwoo Lee, Jaekyun Son, Dong Keun Lee, Hyungju Noh, Jae Yeon Park, Seonggeun Kim, Hyunho Ahn, Sihyun Kim, Sangwan Kim

Institution: Sogang University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation, Ministry of Science and ICT, South Korea, Samsung

Awards: G3600779825, G5995805984, G6754764365

OpenAlex ID: W4412939497

FWCI:

Cites: 46

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Related to: 10