Work

Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress

Year: 2025

Type: article

Abstract: The reliability of flexible p-type low temperature poly-silicon thin film transistors (TFTs) under sole illumination stress was investigated. As the TFT was exposed to illumination, the transfer characteristic curves of the TFTs shifted positively, accompanied by an increase in the off-state current. Through altering the wavelength and intensity of the light, the degradation mechanism for TFTs under illumination stresses can be attributed to photoexcited carriers and residual hydrogen diffusion from the Si3N4 layer to air, leading to a forward shift in the threshold voltage. Moreover, TFTs exposed to the air for an extended period can also effectively remove residual hydrogen in the silicon nitride layer, thereby effectively suppressing photoinduced degradation of the device and improving its reliability.

Source: IEEE Journal of the Electron Devices Society

DOI: 10.1109/jeds.2025.3595808

Authors: Weipeng Ji, Huaisheng Wang, Mingxiang Wang, Dongli Zhang, Nannan Lv, Qi Shan

Institution: Soochow University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, State Key Laboratory of ASIC and System, Fudan University