Compressive Diffusion Break Stressor for Gate-All-Around Nanosheet pFET Transistor Performance Improvement
Year: 2025
Type: conference-paper
Authors: S. Hung, S. Mochizuki, A. Pal, X. He, C. Zhao, E. M. Bazizi, H. Zhou, J. Li, A. Tariq, A. Gasasira, V. Chen, H. Chen, A. Londono-Calderon, B. Peethala, P. Anekal, N. Loubet, B. Colombeau, B. Haran
Institutions: Applied Materials (United States), IBM (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4412963259