Work

Uncovering True DIBL in Oxide-Semiconductor FETs: Impact of Negative Bias Stress and its Significance in 2T0C DRAM Retention

Year: 2025

Type: conference-paper

DOI: 10.23919/vlsitechnologyandcir65189.2025.11074842

Authors: Yuye Kang, Kaizhen Han, Xuanqi Chen, Zijie Zheng, Qiwen Kong, Gan Liu, Leming Jiao, Zhilun Zhang, Zuopu Zhou, Yue Chen, Jiawei Xie, Ying Xu, Yuxuan Wang, Dong Zhang, Yang Feng, Xiao Gong

Institution: National University of Singapore

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412963906

FWCI: 7.075

Cites: 3

Cited by: 3

Related to: 10