Highly Scalable and Reliable Cell Characteristics for 1Tb 9Th Generation 3D-NAND Flash Memory
Year: 2025
Type: conference-paper
Authors: Raeyoung Lee, Sejun Park, Yujeong Seo, Joon Kim, Jinah Jung, Jeongyoon Yeo, Youngsoo Ahn, Hyung Joon Kim, YongLae Kim, Junghwan Lee, Dongsik Lee, Jonghyun Park, Wandong Kim, Byoungil Lee, Kyungyoon Noh, Seungwan Hong, Sung Hoi Hur
Institutions: Samsung (South Korea), Samsung Electronics (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4412964166