Work

Low-Temperature NiSi Formation via Microwave Annealing for Stable Metal-Induced Lateral Crystallization in 3D NAND Flash Memory

Year: 2025

Type: conference-paper

DOI: 10.23919/vlsitechnologyandcir65189.2025.11075197

Authors: Ohhyuk Kwon, Sunhyeong Lee, Jongseon Seo, Geonhui Han, Dongmin Kim, Sejun Park, Junyoung Lee, Kwangmin Park, Siyoung Yang, HanMei Choi, Woosung Lee, Hyunsang Hwang

Institutions: Pohang University of Science and Technology, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Samsung

Award: G2726554951

OpenAlex ID: W4412964558

FWCI: 9.434

Cites: 5

Cited by: 4

Related to: 10