Work

First Demonstration of 2-floor GAA In2O3 Nanosheet FET Enabled by TiN Sacrificial Layers and Fluorine Passivation

Year: 2025
Type: conference-paper
Language: English
Open Access status: closed
OpenAlex ID: W4412964617
FWCI: 11.79
Cites: 2
Cited by: 5
Related to: 10