Work

Exploring FeFET Degradation Mechanisms: Mid-Interlayer as a Viable Solution for Stable Retention, Disturb Immunity, and Low Vth Variation

Year: 2025

Type: conference-paper

DOI: 10.23919/vlsitechnologyandcir65189.2025.11075182

Authors: Giuk Kim, Sangho Lee, Hyojun Choi, Hoon Kim, Seokjoong Shin, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon

Institutions: Korea Advanced Institute of Science and Technology, Samsung (South Korea), Samsung Electronics (South Korea), Hanyang University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Neurosciences Research Foundation, Samsung

Awards: G466797196, G8651228795

OpenAlex ID: W4412964627

FWCI: 13.92

Cites: 2

Cited by: 6

Related to: 10