A 2Nm Gate-All-Around 128Kb Anti-Fuse One-Time Programmable Memory Featuring Dynamic Bit-Line and Sense-Amplifier Offset Cancellation
Year: 2025
Type: conference-paper
Authors: Sangmin Shin, Jaehyung Sin, Jisoo Lee, Gyutae Kwon, Sangseok Lee, Kun Jae Lee, Sewon Ki, Hyojoon An, Mijoung Kim, Hoonjin Bang, Jonghoon Jung, Sanghoon Baek
Institution: Samsung Electronics (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4412964827