Work

Demonstration of Tungsten-doped Indium Oxide MOSFETs with 3 Angstrom EOT, Improved Stability and High on-Current

Year: 2025

Type: conference-paper

DOI: 10.23919/vlsitechnologyandcir65189.2025.11075125

Authors: Hyeonwoo Park, Sharadindu G. Kirtania, E. Sarkar, D. Chakraborty, C. Zhang, H-J Lee, J. Shin, Shimeng Yu, Asif Khan, H. Kim, C. Im, M. J. Hong, D. Ha, Suman Datta

Institutions: Georgia Institute of Technology, Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Defense Advanced Research Projects Agency, Samsung

OpenAlex ID: W4412964995

FWCI: 20.7

Cites: 3

Cited by: 9

Related to: 10