High Performance and Reliable 4F2 IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM
Year: 2025
Type: conference-paper
Authors: D. Ha, Y. Lee, K.J. Moon, S. Lee, K. Yoo, W. Lee, S. Yoo, M.H. Cho, S.N. Kim, M. Terai, M. Kim, J.H. Bae, S. Park, S.M. Lee, M. Hong, K. Sim, C. Im, S. Hong, C. Sung, H. Kim, K. Kim, H. Cho, S. Byeon, I. Shin, J. Chae, Y.S Tak, H. Yoon, S. Kim, S. Jeong, K. Park, S.H. Lee, S.W. Park, P.S. Yun, S. Hyun, S. J. Ahn, J.H. Song
Institutions: Samsung (South Korea), Samsung Electronics (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4412965746