Scaled-Footprint Ultra-Low Power Cryogenic InGaAs/InP HEMTs with Record-High Combination of Low-Noise and High-Frequency Performance
Year: 2025
Type: conference-paper
Abstract: In this work we demonstrate cryogenic$\text{In}_{\mathrm{x}}\text{Ga}_{1-\mathrm{x}}\text{As}/\text{InP}$HEMTs with highly scaled gate footprints, down to$380 \times 40\ \text{nm}^{2}$for a single gate finger, and investigate the impact of footprint scaling on device performance. The 80% In channel devices show$f_{\mathrm{T}}=622$GHz and$f_{\text{MAX}}=733$GHz together with a noise indication factor$\sqrt{I_{\mathrm{D}}}/g_{\mathrm{m}}=0.17 \sqrt{\mathrm{V}\cdot\text{mm}/\mathrm{S}}$at 4 K, which is a record-high combination of high-frequency and low-noise performance. The performance is enabled by heterostructure engineering, resulting in ultra-low$R_{\text{ON}}=250\ \Omega\cdot\mu \mathrm{m}$together with a minimum subthreshold swing SS < 10 mV/decade. These results show that cryogenic III-V HEMT technology can provide excellent performance at scaled footprints for readout in future high-density quantum systems.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4412965864