Work

First Demonstration of 3D Monolithic-Integrated BEOL OSFETs on GaN HEMTs: CEO-GaN

Year: 2025

Type: conference-paper

DOI: 10.23919/vlsitechnologyandcir65189.2025.11075225

Authors: Gerui Zheng, Hanjie Li, Liyan Huang, Jiawei Xie, Zijie Zheng, Hanlin Xie, Yuxuan Wang, Xuanqi Chen, Wenhua Gu, Geok Ing Ng, Xiao Gong

Institutions: National University of Singapore, Nanjing University of Science and Technology, Agency for Science, Technology and Research, Institute of Microelectronics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412965873

FWCI: 2.591

Cites: 8

Cited by: 1

Related to: 10