Record-High $\mathbf{Pr}\left(2 \mathbf{Pr}>\mathbf{40} \mu \mathbf{C} / \mathbf{cm}^{2}\right)$ in 3 nm (Physical) Ferroelectric HZO Annealed at $\mathbf{450}^{\circ}\mathbf{C}$: High-T (85 °C) Electrical Cycling and Oxygen Vacancy Engineering
Year: 2025
Type: conference-paper
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: National Science Foundation
OpenAlex ID: W4412965946
