Work

FeRAM Capacitor with Novel Low-Power, Non-destructive and High Endurance Read operation for High-density Embedded Memory

Year: 2025

Type: conference-paper

DOI: 10.23919/vlsitechnologyandcir65189.2025.11075099

Authors: S. A. Siddiqui, S.-C. Chang, C. Neumann, B. Granados Alpizar, B. Bangalore Rajeeva, C.-C. Lin, G. Choe, B. Krist, A. Augustus, M. Metz, J. Kavalieros, U. Avci

Institution: Intel (United States)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412966198

FWCI: 23

Cites: 3

Cited by: 10

Related to: 10