Work

High Power/PAE (27.8dBm/66%) Emode GaN-on-Si MOSHEMTs for 5V FR3 UE Annlications

Year: 2025

Type: conference-paper

DOI: 10.23919/vlsitechnologyandcir65189.2025.11075139

Authors: Alireza Alian, Sachin Yadav, Rana ElKashlan, Arturo Sibaja-Hernandez, Hao Yu, Sourish Banerjee, Barry O'Sullivan, Babak Kazemi Esfeh, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert

Institution: IMEC

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412966502

FWCI: 17.61

Cites: 7

Cited by: 7

Related to: 10