Work

Comb-Shaped Emitter Engineered p-NiO/n-ZnGa2O4/p-Si Heterojunction Bipolar Transistor for High-Performance Solar-Blind Ultraviolet Photodetection

Year: 2025

Type: article

Source: ACS Photonics

DOI: 10.1021/acsphotonics.5c01012

Authors: Dongyang Han, Shujun Zhu, Jiayi Liu, Kaisen Liu, Yuxia Yang, Shulin Hu, Ningtao Liu, Jichun Ye, Wenrui Zhang

Institutions: Chinese Academy of Sciences, Ningbo Institute of Industrial Technology, Yongjiang Laboratory

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Ningbo, Natural Science Foundation of Zhejiang Province

Awards: G21790851, G251493866, G6920374814, 基于铁电极化效应的锡酸钡基薄膜二维电子气构建及其场效应晶体管研究, 基于硅基Ga2O3 异质结的自驱动日盲紫外探测器界面缺陷调控及能级匹配研究

OpenAlex ID: W4412977000

FWCI: 2.445

Cites: 49

Cited by: 15

Related to: 10