Flexible and Reliable Parylene‐C Resistive Random Access Memory Array with Graphene Barrier for Neuromorphic Systems
Year: 2025
Type: article
Abstract: Resistive Random Access Memories The cover image illustrates a flexible parylene-C-based resistive random access memory (RRAM) array incorporating a graphene diffusion barrier. The graphene layer suppresses excessive metal ion diffusion, thereby controlling the growth of conductive filaments. Artificial neural network simulations further demonstrate the feasibility of these devices for neuromorphic computing applications. More details can be found in article number 2500056 by Dong-Wook Park, Yoon Kim, and co-workers.
Source: Small Structures
DOI: 10.1002/sstr.70048
Authors: Seonjeong Lee, Sookyeong Kim, Boram Kim, Rayoung Park, Dong‐Wook Park, Yoon Kim
Institution: University of Seoul
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $4,110
OpenAlex ID: W4413017729