Work

A Physics-Based Hybrid Model for GaN HEMT Devices Utilizing Substrate Bias Modulation

Year: 2025

Type: conference-paper

DOI: 10.1109/eicct65471.2025.11099753

Authors: Mingzhe Zheng, Yonghe Chen, Ling Li, Wenyan Yu

Institutions: Guilin University of Electronic Technology, Guangxi Normal University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Natural Science Foundation of Guangxi Zhuang Autonomous Region

Award: G1714578121

OpenAlex ID: W4413018484

FWCI:

Cites: 6

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Related to: 10