Work

Design of Low Power SRAM Memory Cell and Sense Amplifier Based on 20NM Technology

Year: 2025

Type: conference-paper

DOI: 10.1109/eicct65471.2025.11099733

Authors: Yi Lu, Wangqian Gao, Tao Jiang, Lijun Zhang

Institution: Soochow University

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4413018590

FWCI:

Cites: 4

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Related to: 10