Work

Ferroelectric Transistors: Operating Principles, Materials, and Applications

Year: 2025

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739725600311

Authors: A. Yu. Reznyukov, K. A. Fetisenkova, A. E. Rogozhin

Institutions: Moscow Power Engineering Institute, Kurchatov Institute, Moscow Institute of Physics and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4413022887

FWCI:

Cites: 99

Cited by:

Related to: 10