Work

Effect of Boundary Roughness on the Variability of the VAC of Silicon Field-Effect GAA Nanotransistors

Year: 2025

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s106373972560030x

Author: N. V. Masalskii

Institution: Kurchatov Institute

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413023054

FWCI:

Cites: 27

Cited by:

Related to: 10