Work

Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistors

Year: 2025

Type: article

Source: Physical review. B./Physical review. B

DOI: 10.1103/physrevb.111.125301

Authors: Kuan-Chu Chen, Clement Godfrin, George Simion, Imri Fattal, Julien Jussot, Stefan Kubicek, Sofie Beyne, Bart Raes, Arne Loenders, Kuo-Hsing Kao, Danny Wan, Kristiaan De Greve

Institutions: IMEC, KU Leuven, National Cheng Kung University

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science and Technology Council, Horizon 2020

Awards: G1287746449, G4390423762

OpenAlex ID: W4413047097

FWCI: 0.37

Cites: 29

Cited by: 1

Related to: 10