Optoelectronic Properties of Atomic Layer Deposited and Sputtered MoS2 Films
Year: 2025
Type: article
Institutions: Stanford University, University of Antwerp
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Funders: Semiconductor Research Corporation, Knut och Alice Wallenbergs Stiftelse, Directorate for Mathematical and Physical Sciences, Defense Advanced Research Projects Agency, Division of Electrical, Communications and Cyber Systems, Argonne National Laboratory, National Science Foundation Graduate Research Fellowship Program
Awards: G107546177, G4089419421, G4520758489
OpenAlex ID: W4413050382
