Work

Analysis of Resistive Switching Performance of ZnO/PVA Bilayer Memristive Device for Neuromorphic Applications

Year: 2025

Type: conference-paper

Source: International Conference on Microwave, Optical and Communication Engineering

DOI: 10.1109/icmoce64100.2025.11076614

Authors: Nikhilamol Simon, Harsh Ranjan, Manoj Mohan, Saurabh Kumar Pandey

Institutions: Mahatma Gandhi University, Indian Institute of Technology Patna

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413066815

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Cites: 15

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Related to: 10