Work

Influence of GaN Cap Layer on the Performance of AlGaN/GaN HEMT

Year: 2025

Type: conference-paper

DOI: 10.1109/pectea61788.2025.11076371

Authors: K Soumiya, Jyotismita Mishra, K P Pradhan

Institutions: Indian Institute of Information Technology, Design and Manufacturing, Kancheepuram, Vellore Institute of Technology University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413087295

FWCI: 5.181

Cites: 21

Cited by: 2

Related to: 10