Preparation of CuWO4 films by thermal annealing of simultaneously RF/DC magnetron co-sputtered Cu–W films
Year: 2025
Type: article
Abstract: Tungstate-based compounds have attracted considerable attention for diverse applications in photocatalysis, optoelectronics, and energy-related fields due to their unique structural, optical, and electronic properties. This study investigates the formation, structural characterization, and optical properties of copper tungstate (CuWO4) thin films, synthesized through co-sputtering of metal precursors followed by thermal annealing at 600oC. Scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the films' surface morphology, phase composition, and chemical states. The results show formation of CuWO4 films with a highly crystalline triclinic structure. Raman and Fourier Transform Infrared (FTIR) spectroscopy further characterize the structural features of both systems, revealing the WO6 octahedral unit in each. The optical band gap of CuWO4 was found to be 2.09 eV, indicating a wide gap semiconductor with indirect transition.
Source: Ceramics International
Language: English
Subfield: Polymers and Plastics
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,830
Awards: G1504515983, G3655795055
OpenAlex ID: W4413099373
