Work

On the Correlation Between Dynamic-QOSS and Dynamic-RON in GaN-Based HEMTs

Year: 2025

Type: article

Abstract: In this brief, we investigate the correlation between dynamic-QOSSand dynamic-RONof 650-V packaged AlGaN/GaN high-electron-mobility transistors (HEMTs). To this end, a novel measurement setup is proposed to evaluate the on-the-fly evolution of both parameters during conventional switch-mode operations. The measurements performed atVDS= 200 V show that the dynamic-RONand dynamic-QOSSpresent similar exponential transients and time constants, potentially explained by the ionization of C-related acceptors in the GaN buffer. The same activation energy (EA)has been observed for bothQOSSandRON, suggesting that their drifts are related to the same physical mechanism. The characterization has also been performed at differentVDSlevels, indicating that the observed correlation holds in the entire range up to 520 V.

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3595562

Authors: Marcello Cioni, Alessandro Chini, Giacomo Cappellini, Giovanni Giorgino, Maurizio Moschetti, Cristina Miccoli, Tariq Wakrim, Davide Maria Lombardo, Simone Strano, Viviana Cerantonio, Maria Eloisa Castagna, Aurore Constant, Ferdinando Iucolano

Institutions: STMicroelectronics (Italy), University of Modena and Reggio Emilia, STMicroelectronics (France)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4413104976

FWCI: 0.934

Cites: 37

Cited by: 3

Related to: 10