Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Highly sensitive and energy-efficient gas sensors are essential for real-time environmental monitoring and air quality assessment. In this work, we present an optically programmable gas sensor based on WSe 2 /hBN heterostructure transistors for NO x detection. The hBN interfacial layer enhances device performance by reducing charge trapping and improving transport, enabling the WSe 2 /hBN configuration to achieve a higher sensing response and faster recovery than WSe 2 /SiO 2 devices. To understand the sensing mechanism, in situ Kelvin probe force microscopy (KPFM) was used, revealing that NO x adsorption at the metal/semiconductor interface modulates the Schottky barrier height (SBH), which governs charge transport and gas sensitivity. Furthermore, we demonstrate that UV-induced charge modulation allows dynamic control of the sensor response, offering a tunable and reversible method for optimizing gas detection. This study highlights the potential of heterostructure engineering and optoelectronic modulation in developing next-generation, low-power, smart gas sensors for environmental monitoring applications.
Institutions: Silesian University of Technology, SINTEF Digital, Indian Institute of Technology Delhi, Sungkyunkwan University, SINTEF, National Institute for Materials Science, Jaypee Institute of Information Technology, University of the West Indies, University of the West Indies, University of the West Indies
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
OpenAlex ID: W4413108401